C-V and I-V characterisation of CdS/CdTe thin film solar cell using defect density model
نویسندگان
چکیده
This paper presents a detailed study of the current-voltage (I-V) and capacitance-voltage (C-V) measurements made on CdS/CdTe based solar cell by numerical modeling. Implementation simulated having superstrate configuration was done with help SCAPS program using defect density model. The I-V characterisation includes window absorber layer optimisation various factors including impurity doping concentration, thickness density. energy band diagram, spectral response currentvoltage plot optimised are shown. C-V (Mott-Schottky analysis) is conducted at different low frequencies to determine flatband potential, carrier concentration validate reliability results. optimum device performance obtained when active 2 ?m thick level 1?1015/cm3.
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ژورنال
عنوان ژورنال: Serbian Journal of Electrical Engineering
سال: 2021
ISSN: ['1451-4869', '2217-7183']
DOI: https://doi.org/10.2298/sjee2102255p